Infineon Technologies has joined forces with Visteon Corporation and SHINRY Technologies to develop a single-stage onboard charger (OBC) for electric vehicles, using gallium nitride (GaN) power semiconductor technology to reduce system complexity, size and manufacturing costs.
The collaboration, announced on 11 November 2026 during the electronica trade fair in Munich, will be carried out through Visteon-Shinry Power Electronics LLC (VSPE), the joint venture between US-based Visteon and China's SHINRY Technologies.
The project combines VSPE's power converter design, control technology and system integration expertise with Infineon's monolithic GaN bidirectional switches (BDS).
The proposed charger will support 22kW three-phase and 19.2kW single-phase AC charging, alongside bidirectional vehicle-to-everything (V2X) functionality, allowing electricity to flow both into and out of an electric vehicle.
Conventional electric vehicle onboard chargers generally use two separate power conversion stages to convert alternating current from the electricity supply into direct current for battery charging.
These designs typically require large capacitors and additional components to manage electrical conversion and maintain stable operation.
VSPE's new architecture combines functions normally handled by separate conversion stages into a single system, removing the bulk capacitors used in conventional two-stage chargers.
According to the companies, the approach could reduce the number of components, simplify circuit design and support more compact onboard charging equipment.
Reducing the number of power conversion stages may also limit energy losses and improve overall efficiency.
However, the companies have not disclosed measured efficiency figures, production costs or comparisons from completed commercial vehicle testing.
A central part of the design is Infineon's GaN monolithic bidirectional switch technology, which integrates bidirectional voltage blocking and current conduction within a single semiconductor device.
Traditional power conversion systems may require multiple semiconductor switches to manage current flow in both directions.
Infineon's integrated approach allows these functions to be handled with fewer devices, potentially simplifying the charger's power stage.
GaN semiconductors also support higher switching frequencies than conventional silicon-based power devices in many power conversion applications.
Higher switching frequencies can reduce the size of magnetic components, including inductors and transformers, helping manufacturers develop smaller and lighter charging systems.
The companies expect these characteristics to improve power density while reducing the space required for the onboard charger.
Benoit Rousseau, Vice President of GaN Automotive at Infineon, said the company's bidirectional switch technology enables alternative power conversion architectures for future electric vehicles.
Infineon's GaN bidirectional switch was also recognised as a Global New Energy Vehicle Innovative Technology at the 2026 World New Energy Vehicle Congress.
VSPE will contribute the converter architecture, control strategy and integration expertise required to incorporate Infineon's semiconductor devices into an automotive charging system.
Zilai Zhao, Co-General Manager of Visteon-Shinry Power Electronics, said the collaboration brings together capabilities in vehicle electronics, power conversion and semiconductor technology.
The joint venture intends to combine these technologies to address the efficiency, reliability and packaging requirements of future electric vehicle platforms.
Mark Sun, Chief Technology Officer of SHINRY Technologies, said the company's engineering team is working to validate the single-stage design against the reliability standards required by global automotive manufacturers.
SHINRY, headquartered in Shenzhen, develops power electronics products for new energy vehicles, including DC/DC converters and onboard charging systems.
The company has research and manufacturing operations across China, including Shenzhen, Shanghai, Hefei and Wuhan.
Visteon contributes its automotive electronics and system integration capabilities, including experience in electric vehicle architectures.
The proposed charger is designed to support bidirectional power flow, allowing electric vehicles to interact with external electrical systems.
Unlike conventional charging equipment that transfers power from the grid to the vehicle battery, bidirectional chargers can also enable stored energy to be supplied to external loads.
Such systems can support applications including vehicle-to-grid (V2G), vehicle-to-home (V2H) and other vehicle-to-everything arrangements, subject to suitable vehicle hardware, grid connections and operating requirements.
For automakers, integrating bidirectional functionality into a more compact onboard charger could help reduce packaging constraints while providing additional energy management capabilities.
However, commercial deployment will require the technology to meet automotive safety, reliability and electrical compatibility requirements.
The partnership reflects continued investment in wide-bandgap semiconductor technologies for electric vehicle power conversion.
GaN devices are being developed for applications where switching speed, power density and conversion efficiency are important design considerations.
Silicon carbide remains an established technology for high-voltage electric vehicle power systems, while GaN offers potential advantages in selected power conversion architectures.
Infineon is seeking to extend its GaN portfolio into automotive charging applications as manufacturers examine ways to reduce the size and cost of onboard power electronics.
For semiconductor suppliers and automotive electronics manufacturers across Asia, including China, Japan and South Korea, the development could create further opportunities in GaN devices, converter components and charging system integration.
The collaboration remains at the development and validation stage. The companies have not announced a commercial production timetable, vehicle manufacturer contracts or projected manufacturing volumes.
The next stage will involve validating the single-stage architecture and demonstrating that the GaN-based charger can meet automotive requirements for efficiency, thermal performance, reliability and cost.
Its commercial prospects will depend on whether those advantages can be demonstrated consistently under real vehicle operating conditions.