Soitec Announces Validation of Its SmartSiC Substrates for SiC Power Devices
The certified SmartSiC substrates are expected to improve performance and reliability of SiC based power semiconductor devices while reducing environmental footprint.
Soitec has announced that its SmartSiC technology has successfully completed formal validation for use in next generation silicon carbide power devices, marking a major milestone for the company’s rapidly expanding power electronics business. The validation confirms that SmartSiC substrates meet strict performance, reliability and manufacturability requirements demanded by leading device makers, paving the way for broader adoption across automotive, industrial and energy applications.
SmartSiC is Soitec’s engineered substrate platform designed to deliver superior electrical performance for SiC MOSFETs, diodes and other power switching devices. By combining advanced wafer bonding expertise with engineered layer transfer techniques, the platform enables improved material uniformity, optimised defect levels and enhanced thermal performance compared with traditional SiC wafers.
The validation process involved extensive electrical characterisation, thermal cycling, crystal quality analysis and device performance testing conducted in collaboration with major industry partners. Results demonstrated consistent improvements in device efficiency, breakdown robustness and manufacturability, reinforcing SmartSiC as a high value substrate option for companies scaling SiC production for electric vehicles and high efficiency power systems.
Soitec noted that SmartSiC also offers a compelling environmental advantage. By using engineered substrate recycling and layer re-use methodologies, the technology significantly reduces raw material consumption compared with conventional SiC boule growth. This contributes to a lower environmental footprint and a more sustainable pathway for SiC industry scaling, especially as global demand accelerates.
The company highlighted that SmartSiC is designed to support the transition toward higher voltage platforms, faster switching architectures and more efficient power conversion systems. These improvements are essential for the next wave of electric mobility, renewable energy infrastructure and industrial automation.
“Our SmartSiC platform has now demonstrated the performance, quality and sustainability benefits the industry has been seeking,” Soitec said. “Validation marks a pivotal step in our ambition to become a leading substrate partner for SiC device manufacturers worldwide. We are now fully focused on supporting customers as they ramp their designs toward volume production.”
The validation comes at a time when silicon carbide continues to gain traction as a preferred technology for high efficiency power electronics, driven by strong momentum in electric vehicles, data centres and energy storage systems. Soitec believes SmartSiC positions the company competitively as the SiC market enters a phase of accelerated growth and heightened demand for engineered substrate innovation.
