Micron Technology, Inc., a global leader in memory and storage solutions, today announced plans to invest $9.6 billion in the construction of a new advanced semiconductor fabrication facility in Hiroshima, Japan. The new plant will focus on producing next-generation high-bandwidth memory (HBM) chips designed to power the world’s rapidly expanding artificial intelligence (AI) and high-performance computing workloads.
Construction of the state-of-the-art facility is scheduled to begin in May 2026, with mass production targeted to commence around 2028. The investment underscores Micron’s long-term commitment to strengthening the global semiconductor supply chain and accelerating innovation in AI memory technologies.
“AI is transforming every industry, and high-bandwidth memory is becoming a foundational technology for enabling advanced AI systems,” said an Executive at Micron Technology. “Our new Hiroshima facility will expand Micron’s manufacturing capabilities to meet surging global demand, while reinforcing Japan’s role as a critical hub in the semiconductor ecosystem.”
The new HBM facility will integrate cutting-edge manufacturing processes designed to deliver higher performance, lower power consumption, and improved energy efficiency. It will support the production of Micron’s next-generation HBM solutions used in AI accelerators, data centers, advanced GPUs, and edge applications.
Japan’s government has continued to provide strong support for revitalizing domestic semiconductor production, and Micron’s investment aligns closely with national initiatives to bolster advanced chip manufacturing within the country.
“Micron’s expanded presence in Japan strengthens collaboration with our partners and customers while helping secure a robust and resilient supply chain for AI-era memory products,” added spokesperson from company
The facility is expected to create new high-skilled jobs and drive economic growth in Hiroshima and surrounding regions.