Faraday Expands 28nm IP Portfolio to Accelerate Endpoint AI and AIoT SoC Development

Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider,  announced its IP solutions on UMC’s 28nm platform with SST-ESF4 eNVM, designed to enable next-generation MCU and AIoT SoCs targeting endpoint AI applications. The comprehensive IP solution integrates SST eFlash controller and BIST, together with silicon-proven analogue and high-speed interface PHY IPs, providing a stable and production-ready foundation for low-power, high-performance endpoint AI designs.

Built on Faraday’s extensive 28nm design and silicon experience, the IP solutions go beyond IP delivery to offer end-to-end eFlash enablement, including characterisation, verification, test-chip support, and production readiness. By consolidating peripheral and analogue IPs, such as SRAM, USB, PLL, ADC/DAC, RTC library, temperature sensor, OSC and generic IO, etc. Faraday helps customers enhance test coverage, improve manufacturing yield, and accelerate production ramp-up. The solution also extends Faraday’s proven success from 55nm SST to 28nm SST, enabling a smooth, low-risk transition with improved performance and power efficiency.

“Endpoint AI applications require fast boot, reliable on-chip non-volatile memory, and highly efficient power-performance balance,” said Flash Lin, COO of Faraday Technology. “With our 28nm SST-ESF4 eFlash solutions and decades of eNVM expertise, Faraday provides customers with a scalable, manufacturable, and silicon-proven solution that significantly reduces development risk while accelerating time-to-market for AIoT and industrial edge SoCs.”