CVD Equipment Corporation Advances Silicon Carbide Manufacturing with Successful Boule Growth
Low-defect 4H SiC crystals validate PVT system capabilities for emerging wide bandgap semiconductor applications
CVD Equipment Corporation (NASDAQ: CVV) announced the successful growth of single-crystal silicon carbide (SiC) boules grown on CVD Equipment (CVDE) Physical Vapour Transport (PVT) Systems and characterised by Stony Brook University (SBU) in support of their new semiconductor research centre, “onsemi Research Centre for Wide Bandgap Materials”.
The SiC boule was analyzed at SBU and determined to be 4H crystal structure, without any polytypes, and low defect density. This achievement strengthens CVDE’s position as an equipment supplier for next-generation semiconductor manufacturing and emerging markets that rely on high-performance materials.
Michael Dudley, Professor and Director of the onsemi Research Centre for Wide Bandgap Materials at Stony Brook University, stated, “Using the PVT systems developed by CVDE to successfully grow silicon carbide single crystal boules under the auspices of the onsemi centre is a natural evolution of the long-term collaboration between CVDE and SBU. The synergy of the expertise at CVDE in PVT systems and the prolific research background in silicon carbide and other wide bandgap materials at SBU will propel the next generation of crystal growth technologies for silicon carbide and other wide bandgap semiconductor materials.”
Manny Lakios, President and CEO of CVD Equipment Corporation (CVDE), added, “We are pleased with our collaboration with Stony Brook University, which enables the opportunity to demonstrate the performance of our Physical Vapour Transport equipment and our commitment to enabling the next generation of silicon carbide technology. We value our partners and customers, intending to advance the state-of-the-art of semiconductor manufacturing.”
