Fraunhofer IAF Develops 420GHz Broadband MMIC for AI Datacentres and High-Resolution Radar
The 20nm InGaAs-on-silicon HEMT amplifier delivers 11 ± 2dB gain from 4GHz to 420GHz, combining wide bandwidth, low noise and up to 8dBm output power for advanced connectivity, measurement and sensing applications.
Fraunhofer Institute for Applied Solid State Physics IAF in Freiburg, Germany, has developed a new broadband distributed amplifier monolithic microwave integrated circuit (MMIC) designed for applications including data centres, precision measurement equipment and high-resolution radar sensors. The new amplifier is intended to meet the growing requirement for devices that can deliver very wide bandwidth while maintaining low noise levels and sufficient output power.
The MMIC is based on Fraunhofer IAF’s proprietary 20nm indium gallium arsenide (InGaAs)-on-silicon high-electron-mobility transistor (HEMT) technology. It provides a gain of 11 ± 2dB across a frequency range extending from 4GHz to 420GHz. This represents a move away from earlier generations, which were manufactured using gallium arsenide (GaAs) substrates and featured a 35nm gate length.
According to Fraunhofer IAF, the amplifier combines wide frequency coverage with low noise and useful output power. Up to 202GHz, the device offers noise figures ranging from 3.2dB to 7.7dB, while an operating configuration optimised for low-noise performance reduces the range to between 2.8dB and 6.7dB. The amplifier’s saturated output power is reported at between 6dBm and 8dBm.
The technology could have applications in next-generation data-centre infrastructure, particularly systems using optical data transmission. In these environments, broadband amplifiers are required at interfaces where optical signals are converted into electrical signals and vice versa. As AI workloads continue to increase computing and data-centre requirements, higher-speed optical links are becoming increasingly important for supporting data movement within modern infrastructure.
Beyond data centres, the broadband MMIC could also support advanced measurement and sensing applications. Fraunhofer IAF says the combination of high bandwidth, low noise and output power can contribute to greater measurement precision and improve the resolution, range and sensitivity of radar-based sensing systems.
Fraunhofer IAF is scheduled to showcase samples of the amplifier at the 29th European Microwave Week (EuMW 2026), taking place at ExCeL London from 4 to 9 October. FormFactor, which is collaborating with the institute on measurement technology, will also demonstrate a live measurement of the chip during the event. Researchers from Fraunhofer IAF are expected to present additional work covering high-frequency electronics, HEMT technologies, receivers, mixers, low-noise amplifiers and GaN-based devices during the conference programme.
