Magnachip Launches 650V Super Junction MOSFETs in 4-Pin TOLL Package for High-Power Consumer and AI Applications

30 October 2025 | NEWS

The new devices double current capability while reducing size and height, delivering superior switching stability, thermal efficiency, and compact performance for next-generation premium electronics and AI datacenter systems.

Magnachip Semiconductor Corporation announced the release of two new 650V Super Junction MOSFET (SJ MOSFET) products, adopting the TO-Leadless (TOLL) package, that are designed to meet the high-power and high-current requirements of premium consumer electronics such as premium TVs, gaming monitors, AI laptop adaptors, and chargers.

Current Magnachip products with TOLL packaging, such as the 80V – 200V eXtreme Trench MOSFETs, use a 3-pin configuration. The new 650V SJ MOSFETs have a 4-pin Kelvin configuration, which minimizes the effects of parasitic inductance on the gate-source return path, thereby improving switching stability and overall power efficiency by reducing gate oscillation (Ringing).

As compared to a conventional D2PAK package, the 4-pin TOLL package delivers more than a 100% increase in current capability, a 24% reduction in footprint and a 48% reduction in height. Therefore, the 4-pin TOLL package is suitable for smaller PCB and high-power density applications, which demand high power efficiency and effective heat dissipation performance.

Hyuk Woo, CTO of Magnachip, commented: “Our new 650V SJ MOSFET TOLL products are designed to meet both PCB space-saving and high-performance requirements of slim form-factor applications. Magnachip will continue to expand its 600V TOLL package product lineup in the near future to support new-generation products for AI datacenters and high-power applications.”

Magnachip’s New TOLL Packaged 650V SJ MOSFETs

Product

VDS [V]

*RDS(on), max

Package

Applications

MMTB65R099RFRH

650V

99mΩ

TOLL

Premium TVs, gaming monitors, AI laptop adaptors, and chargers, and more

MMTB65R130RFRH

650V

130mΩ

TOLL

*RDS(on): the resistance measured between the drain and source when the MOSFET is turned on